Lub thyristor nti tsim los ntawm RUNAU Electronics yog thawj zaug qhia los ntawm GE kev ua qauv thiab thev naus laus zis uas ua raws li Asmeskas daim ntawv thov tus qauv thiab tsim nyog los ntawm cov neeg siv khoom thoob ntiaj teb.Nws tau tshwj xeeb hauv cov yam ntxwv muaj zog thermal qaug zog, lub neej ua haujlwm ntev, siab voltage, tam sim no loj, muaj zog ib puag ncig adaptability, thiab lwm yam. Nyob rau hauv 2010, RUNAU Electronics tsim tshiab qauv ntawm thyristor nti uas ua ke cov tsoos zoo ntawm GE thiab European technology, kev ua tau zoo thiab efficiency tau optimized zoo heev.
Parameter:
Txoj kab uas hla mm | Thickness mm | Qhov hluav taws xob V | Rooj vag Dia. mm | Cathode puab Dia. mm | Cathode tawm Dia. mm | Tjm ℃ |
25.4 ib | 1.5 ± 0.1 | ≤2000 | 2.5 | 5.6 | 20.3 | 125 |
25.4 ib | 1.6-1.8 Nws | 2200-3500 Nws | 2.6 | 5.6 | 15.9 ib | 125 |
29.72 Nws | 2 ± 0.1 | ≤2000 | 3.3 | 7.7 | 24.5 ib | 125 |
32 | 2 ± 0.1 | ≤2000 | 3.3 | 7.7 | 26.1 ib | 125 |
35 | 2 ± 0.1 | ≤2000 | 3.8 | 7.6 | 29.1 ib | 125 |
35 | 2.1-2.4 | 2200-4200 Nws | 3.8 | 7.6 | 24.9 ib | 125 |
38.1 ib | 2 ± 0.1 | ≤2000 | 3.3 | 7.7 | 32.8 ib | 125 |
40 | 2 ± 0.1 | ≤2000 | 3.3 | 7.7 | 33.9 ib | 125 |
40 | 2.1-2.4 | 2200-4200 Nws | 3.5 | 8.1 | 30.7 ib | 125 |
45 | 2.3 ± 0.1 | ≤2000 | 3.6 | 8.8 ib | 37.9 ib | 125 |
50.8 ib | 2.5 ± 0.1 | ≤2000 | 3.6 | 8.8 ib | 43.3 ib | 125 |
50.8 ib | 2.6-2.9 | 2200-4200 Nws | 3.8 | 8.6 | 41.5 ib | 125 |
50.8 ib | 2.6-2.8 Nws | 2600-3500 Nws | 3.3 | 7 | 41.5 ib | 125 |
55 | 2.5 ± 0.1 | ≤2000 | 3.3 | 8.8 ib | 47.3 ib | 125 |
55 | 2.5-2.9 | ≤4200 | 3.8 | 8.6 | 45.7 ib | 125 |
60 | 2.6-3.0 Nws | ≤4200 | 3.8 | 8.6 | 49.8 ib | 125 |
63.5 ib | 2.7-3.1 | ≤4200 | 3.8 | 8.6 | 53.4 ib | 125 |
70 | 3.0-3.4 | ≤4200 | 5.2 | 10.1 | 59.9 ua | 125 |
76 | 3.5-4.1 | ≤4800 | 5.2 | 10.1 | 65.1 ib | 125 |
89 | 4-4.4 | ≤4200 | 5.2 | 10.1 | 77.7 ib | 125 |
99 | 4.5-4.8 | ≤3500 | 5.2 | 10.1 | 87.7 ib | 125 |
Technical specification:
RUNAU Electronics muab lub zog semiconductor chips ntawm theem tswj thyristor thiab ceev hloov thyristor.
1. Tsawg nyob rau hauv lub xeev voltage poob
2. Lub thickness ntawm txhuas txheej yog ntau tshaj 10 microns
3. Ob txheej txheej tiv thaiv mesa
Tswv yim:
1. Yuav kom nyob twj ywm qhov kev ua tau zoo, cov nti yuav tsum tau muab cia rau hauv nitrogen los yog lub tshuab nqus tsev kom tsis txhob muaj qhov hloov hluav taws xob los ntawm oxidation thiab av ntawm molybdenum daim.
2. Nco ntsoov khaws cov nti saum npoo kom huv, thov hnav cov hnab looj tes thiab tsis txhob kov cov nti nrog tes liab qab
3. Ua tib zoo ua haujlwm hauv cov txheej txheem ntawm kev siv.Tsis txhob ua puas rau cov npoo npoo ntawm cov nti thiab cov txhuas txheej hauv cov ncej ntawm lub rooj vag thiab cathode
4. Nyob rau hauv kev sim los yog encapsulation, thov nco ntsoov tias qhov parallelism, flatness thiab clamp quab yuam lub fixture yuav tsum coincide nrog cov qauv teev.Kev sib piv tsis zoo yuav ua rau lub siab tsis sib xws thiab nti puas los ntawm kev quab yuam.Yog tias dhau lub zog clamp yuam, lub nti yuav puas yooj yim.Yog tias lub zog clamp quab yuam me me dhau, qhov kev sib cuag tsis zoo thiab cov cua kub dissipation yuav cuam tshuam rau daim ntawv thov.
5. Lub siab thaiv nyob rau hauv kev sib cuag nrog cathode nto ntawm lub nti yuav tsum tau annealed
Pom zoo Clamp Force
Chips Loj | Clamp Force pom zoo |
(KN) ± 10% | |
Ib 25.4 | 4 |
Φ30 lossis Φ30.48 | 10 |
Φ35 | 13 |
Φ38 lossis Φ40 | 15 |
lwj 50.8 | 24 |
Φ55 | 26 |
Φ60 | 28 |
ua 63.5 | 30 |
Φ70 | 32 |
Φ76 | 35 |
Φ85 | 45 |
Φ99 ua | 65 |