Nias-Pack IGBT
Xovxwm-pob IGBT (IEGT)
| HOM | VDRM V | VRRM V | IT (AV)@80 ℃ A | ITGQM@CS A / µF | TSI @ 10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃ / W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤ 2.2 | ≤ 1.20 | ≤0.50 | 125 | 0.075 ib |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤ 2.5 | ≤ 1.20 | ≤0.50 | 125 | 0.075 ib |
| CSG15F2500 | 2500 | 17 | 570 ib | 1500 | 3 | 10 | ≤ 2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 ib |
| CSG20H2500 | 2500 | 17 | 8 30 | 2000 | 6 | 16 | ≤ 2.8 | ≤1.66 | ≤ 0.57 | 125 | 0.017 ib |
| CSG25H2500 | 2500 | 16 | 867 ib | 2500 | 6 | 18 | ≤ 3.1 | ≤1.66 | ≤ 0.57 | 125 | 0.017 ib |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤ 2.5 | ≤1.50 | ≤ 0.33 | 125 | 0.012 ib |
| CSG10F2500 | 2500 | 15 | 8 30 | 1000 | 2 | 12 | ≤ 2.5 | ≤1.66 | ≤ 0.57 | 125 | 0.017 ib |
| CSG06D4500 | 4 500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 Nws |
| CSG10F4500 | 4 500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤ 0.35 | 125 | 0.03 ib |
| CSG20H4500 | 4 500 | 16 | 745 ib | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤ 0.85 | 125 | 0.017 ib |
| CSG30J4500 | 4 500 | 16 | 870 ib | 3000 | 6 | 16 | ≤4.0 | ≤ 2.2 | ≤ 0.60 | 125 | 0.012 ib |
| CSG40L4500 | 4 500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤ 2.1 | ≤ 0.58 | 125 | 0.011 ib |
Nco tseg:D- nrog diod ib, A-tsis muaj diode ib feem
Conventionally, lub solder hu rau IGBT modules tau siv nyob rau hauv lub hloov iav ntawm saj zawg zog DC kis tau tus mob system.Lub pob module yog ib sab tshav kub dissipation.Lub zog muaj peev xwm ntawm cov cuab yeej raug txwv thiab tsis tsim nyog yuav tsum tau txuas nrog hauv koob, lub neej tsis zoo hauv huab cua ntsev, tsis muaj kev vibration los tiv thaiv kev poob siab lossis thermal qaug zog.
Hom tshiab xovxwm-hu rau high-power xovxwm-pob IGBT ntaus ntawv tsis tsuas yog daws tau tag nrho cov teeb meem ntawm qhov chaw nyob rau hauv cov txheej txheem soldering, thermal qaug zog ntawm cov khoom siv soldering thiab qis efficiency ntawm ib sab tshav kub dissipation tab sis kuj tshem tawm cov thermal kuj ntawm ntau yam khoom, txo qhov loj thiab qhov hnyav.Thiab txhim kho kev ua haujlwm zoo thiab kev ntseeg siab ntawm IGBT ntaus ntawv.Nws yog qhov tsim nyog los ua kom txaus siab rau lub zog siab, siab-voltage, kev ntseeg siab ntawm qhov hloov pauv DC kis tau tus mob.
Kev hloov pauv ntawm hom kev sib cuag los ntawm nias-pob IGBT yog qhov tseem ceeb.
Txij li thaum xyoo 2010, Runau Electronics tau piav qhia los tsim cov tshiab hom xovxwm-pob IGBT ntaus ntawv thiab ua tiav cov khoom hauv xyoo 2013. Qhov kev ua tau zoo tau lees paub los ntawm kev tsim nyog hauv lub tebchaws thiab kev ua tiav tiav.
Tam sim no peb tuaj yeem tsim thiab muab cov xovxwm-pob IGBT ntawm IC ntau yam hauv 600A txog 3000A thiab VCES ntau yam hauv 1700V txog 6500V.Lub zeem muag zoo tshaj plaws ntawm cov xovxwm-pob IGBT ua nyob rau hauv Suav teb yuav tsum tau siv nyob rau hauv Tuam Tshoj hloov tau DC kis tau tus mob yog heev xav thiab nws yuav dhau los ua lwm lub ntiaj teb no mais pob zeb ntawm Tuam Tshoj lub hwj chim hluav taws xob kev lag luam tom qab high-ceev hluav taws xob tsheb ciav hlau.
Kev Taw Qhia luv luv ntawm Hom Hom:
1. Hom: Xovxwm-pob IGBT CSG07E1700
●Cov yam ntxwv hluav taws xob tom qab ntim thiab nias
● Rov qabthaum uas tig mustxuasceev rov qab diodexaus
● Parameter:
Rated tus nqi (25 ℃)
a.Cov khoom siv hluav taws xob: VGES = 1700 (V)
b.Gate Emitter Voltage: VCES = ± 20 (V)
c.Cov khoom tam sim no: IC = 800 (A) ICP = 1600 (A)
d.Cov khoom siv hluav taws xob: PC = 4440 (W)
e.Ua Haujlwm Kub Kub: Tj = 20 ~ 125 ℃
f.Cia Kub: Tstg = -40 ~ 125 ℃
Nco tseg: ntaus ntawv yuav puas yog tshaj tus nqi ntsuas
Hluav taws xobCharacteristics, TC 125 ℃ , Rth (thermal tsis kam ntawmkev sib txuas raucas)tsis suav nrog
a.Qhov rooj nkag tam sim no: IGES = ± 5 (μA)
b.Tus sau Emitter Thaiv tam sim no ICES = 250 (mA)
c.Cov Emitter Saturation Voltage: VCE (sat) = 6 (V)
d.Gate Emitter Threshold Voltage: VGE (th) = 10 (V)
e.Tig lub sijhawm: Ton = 2.5μs
f.Tig lub sijhawm: Toff = 3μs
2. Hom: Xovxwm-pob IGBT CSG10F2500
●Cov yam ntxwv hluav taws xob tom qab ntim thiab nias
● Rov qabthaum uas tig mustxuasceev rov qab diodexaus
● Parameter:
Rated tus nqi (25 ℃)
a.Cov khoom siv hluav taws xob: VGES = 2500 (V)
b.Gate Emitter Voltage: VCES = ± 20 (V)
c.Cov khoom tam sim no: IC = 600 (A) ICP = 2000 (A)
d.Cov khoom siv hluav taws xob: PC = 4800 (W)
e.Ua Haujlwm Kub Kub: Tj = 40 ~ 125 ℃
f.Cia Kub: Tstg = -40 ~ 125 ℃
Nco tseg: ntaus ntawv yuav puas yog tshaj tus nqi ntsuas
Hluav taws xobCharacteristics, TC 125 ℃ , Rth (thermal tsis kam ntawmkev sib txuas raucas)tsis suav nrog
a.Qhov rooj nkag tam sim no: IGES = ± 15 (μA)
b.Tus sau Emitter Thaiv tam sim no ICES = 25 (mA)
c.Collector Emitter Saturation Voltage: VCE (sat) = 3.2 (V)
d.Gate Emitter Threshold Voltage: VGE (th) = 6.3 (V)
e.Tig lub sijhawm: Ton = 3.2μs
f.Tig lub sijhawm: Toff = 9.8μs
g.Diode Forward voltage: VF = 3.2 V
h.Diode Rov Qab Rov Qab Sijhawm: Trr = 1.0 μs
3. Hom: Xovxwm-pob IGBT CSG10F4500
●Cov yam ntxwv hluav taws xob tom qab ntim thiab nias
● Rov qabthaum uas tig mustxuasceev rov qab diodexaus
● Parameter:
Rated tus nqi (25 ℃)
a.Cov khoom siv hluav taws xob: VGES = 4500 (V)
b.Gate Emitter Voltage: VCES = ± 20 (V)
c.Cov khoom tam sim no: IC = 600 (A) ICP = 2000 (A)
d.Lub cev muaj zog: PC = 7700 (W)
e.Ua Haujlwm Kub Kub: Tj = 40 ~ 125 ℃
f.Cia Kub: Tstg = -40 ~ 125 ℃
Nco tseg: ntaus ntawv yuav puas yog tshaj tus nqi ntsuas
Hluav taws xobCharacteristics, TC 125 ℃ , Rth (thermal tsis kam ntawmkev sib txuas raucas)tsis suav nrog
a.Qhov rooj nkag tam sim no: IGES = ± 15 (μA)
b.Tus sau Emitter Thaiv tam sim no ICES = 50 (mA)
c.Collector Emitter Saturation Voltage: VCE (sat) = 3.9 (V)
d.Gate Emitter Threshold Voltage: VGE(th) = 5.2 (V)
e.Tig lub sijhawm: Ton = 5.5μs
f.Tig lub sijhawm: Toff = 5.5μs
g.Diode Forward voltage: VF = 3.8 V
h.Diode Rov Qab Rov Qab Sijhawm: Trr = 2.0 μs
Nco tseg:Xovxwm-pob IGBT yog qhov zoo dua nyob rau hauv lub sij hawm ntev kev siv tshuab kev ntseeg siab, siab tiv thaiv kev puas tsuaj thiab cov yam ntxwv ntawm cov xovxwm txuas cov qauv, yooj yim rau kev ua haujlwm hauv cov cuab yeej siv, thiab piv nrog cov tsoos GTO thyristor, IGBT yog voltage-tsav txoj kev. .Yog li ntawd, nws yog ib qho yooj yim rau kev khiav lag luam, kev nyab xeeb thiab kev khiav hauj lwm dav.