Cov ntaub ntawv pov thawj uas siv los ntawm Jiangsu Yangjie Runau Semiconductor Co hauv kev tsim cov vuam diode yog raws li hauv qab no:
1. GB/T 4023—1997 Discrete Devices Of Semiconductor Devices Thiab Integrated Circuits Part 2: Rectifier Diodes
2. GB/T 4937—1995 Mechanical And Climatic Test Methods For Semiconductor Devices
3. JB/T 2423—1999 Lub Hwj Chim Semiconductor Devices - Qauv Qauv
4. JB/T 4277—1996 Fais Fab Semiconductor Device Ntim
5. JB/T 7624—1994 Rectifier Diode Test Method
Qauv Thiab Qhov Loj
1. Lub npe qauv: Tus qauv ntawm lub vuam diode yog hais txog cov kev cai ntawm JB/T 2423-1999, thiab lub ntsiab lus ntawm txhua feem ntawm cov qauv yog qhia hauv daim duab 1 ntawm hauv qab no:
2. Cov cim kos duab thiab lub davhlau ya nyob twg (sub) kev txheeb xyuas
Cov cim graphical thiab kev txheeb xyuas lub davhlau ya nyob twg muaj nyob hauv daim duab 2, lub xub taw qhia rau lub davhlau ya nyob twg cathode.
3. Cov duab thiab qhov ntev ntawm kev teeb tsa
Cov duab ntawm cov welded diode yog convex thiab disc hom, thiab cov duab nrog loj yuav tsum tau raws li qhov yuav tsum tau ntawm daim duab 3 thiab Table 1.
| Yam khoom | Qhov Loj (mm) | ||
| wb 7100 | ZWM 12000 | ZW16000/ZW18000 | |
| Cathode flange (Dmax) | 61 | 76 | 102 |
| Cathode thiab anode Mesa (D1) | 44 ± 0.2 | 57 ± 0.2 | 68 ± 0.2 |
| Max txoj kab uas hla ntawm ceramic nplhaib (D2max) | 55.5 ib | 71.5 ib | 90 |
| Tag nrho thickness (A) | 8 ± 1 | 8 ± 1 | 13 ± 2 |
| Mount txoj hauj lwm qhov | Txoj kab uas hla: φ3.5 ± 0.2mm, Qhov tob ntawm qhov: 1.5 ± 0.3mm | ||
Kev ntsuas thiab yam ntxwv
1. Qib Parameter
Cov koob ntawm qhov rov qab rov ua dua qhov siab tshaj qhov siab (VRRM) yog raws li tau teev tseg hauv Table 2
Rooj 2 Voltage Level
| VRRM(V) | 200 | 400 |
| Qib | 02 ib | 04 ib |
2. Txwv cov nqi
Cov nqi txwv yuav tsum ua raws li Table 3 thiab siv rau tag nrho cov kev khiav hauj lwm kub.
Table 3 txwv tus nqi
| Txwv tus nqi | Cim | Chav tsev | Tus nqi | |||
| wb 7100 | ZWM 12000 | ZWM 16000 | ZWM 18000 | |||
| Case kub | Txau | ℃ | -40-85 | |||
| Qhov ntsuas kub sib npaug (max) | T(vj) | ℃ | 170 | |||
| Cia kub | Tstg | ℃ | -40 ~ 170 | |||
| Repetitive ncov rov qab voltage (max) | VRRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Rov qab tsis-rov ua dua siab tshaj voltage (max | VRSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Forward nruab nrab tam sim no (max) | IF (AV) | A | 7100 ib | 12000 | 16 000 | 18 000 |
| Forward (non-repetitive) surge tam sim no (max) | IFSM | A | 55 000 | 8 5000 | 120000 | 135 000 Nws |
| I² (max) | I² t | kA² | 15 100 | 3 6100 | 72000 ib | 9 1000 |
| Mounting quab yuam | F | kN | 22-24 ib | 30-35 | 45-50 | 52-57 ib |
3. Cov yam ntxwv muaj nuj nqis
Table 4 Max tus yam ntxwv muaj nuj nqis
| Cim thiab mob | Cim | Chav tsev | Tus nqi | |||
| wb 7100 | ZWM 12000 | ZWM 16000 | ZWM 18000 | |||
| Forward ncov voltageIFM= 5000A, Tj= 25 ℃ | VFM | V | 1.1 | 1.08 Nws | 1.06 ib | 1.05 Nws |
| Rov qab repetitive ncov tam sim noTj= 25 ℃, Tj= 170 ℃ | IRRM | mA | 50 | 60 | 60 | 80 |
| Thermal resistance Junction-to-case | Rjc | ℃ / W | 0.01 ib | 0.006 ib | 0.004 ib | 0.004 ib |
| Nco tseg: rau qhov xav tau tshwj xeeb thov sab laj | ||||||
Covvuam diodetsim los ntawm Jiangsu Yangjie Runau Semiconductor yog dav siv nyob rau hauv cov khoom siv vuam, nruab nrab thiab siab zaus vuam tshuab mus txog 2000Hz lossis siab dua.Nrog rau ultra-low pem hauv ntej ncov voltage, ultra-low thermal kuj, lub xeev ntawm kos duab siv technology, zoo heev hloov peev xwm thiab ruaj khov kev ua tau zoo rau cov neeg siv thoob ntiaj teb, lub vuam diode los ntawm Jiangsu Yangjie Runau Semiconductor yog ib qho ntawm cov khoom siv txhim khu kev qha tshaj plaws ntawm Tuam Tshoj lub zog. Cov khoom siv semiconductor.
Post lub sij hawm: Jun-14-2023