Kev piav qhia
GE cov qauv tsim thiab kev siv tshuab tau qhia thiab ua haujlwm los ntawm RUNAU Electronics txij li xyoo 1980s.Kev ua tiav kev tsim khoom thiab kev sim ua tiav tau ua tiav raws li qhov xav tau ntawm Asmeskas kev ua lag luam xav tau.Raws li ib tug pioneer ntawm manufacturing thyristor nyob rau hauv Tuam Tshoj, RUNAU Electronics tau muab cov kos duab ntawm lub xeev lub zog hluav taws xob cov khoom siv rau teb chaws USA, European lub teb chaws thiab cov neeg siv thoob ntiaj teb.Nws yog qhov tsim nyog thiab tau txais txiaj ntsig los ntawm cov neeg siv khoom thiab ntau qhov kev yeej loj thiab tus nqi tau tsim rau cov neeg koom tes.
Taw qhia:
1. Chip
Lub thyristor nti tsim los ntawm RUNAU Electronics yog sintered alloying tshuab ua haujlwm.Cov silicon thiab molybdenum wafer tau sintered rau alloying los ntawm ntshiab txhuas (99.999%) nyob rau hauv lub tshuab nqus tsev siab thiab kub ib puag ncig.Kev tswj hwm ntawm cov yam ntxwv sintering yog qhov tseem ceeb los cuam tshuam qhov zoo ntawm thyristor.Kev paub ntawm RUNAU Electronics ntxiv rau kev tswj hwm qhov sib txuas ntawm qhov tob, qhov chaw tiaj tus, cov kab noj hniav hlau zoo li cov txuj ci diffusion tag nrho, lub nplhaib lub voj voog qauv, cov qauv rooj vag tshwj xeeb.Tsis tas li ntawd cov kev ua haujlwm tshwj xeeb tau ua haujlwm los txo cov neeg nqa khoom lub neej ntawm lub cuab yeej, kom cov cab kuj sab hauv recombination ceev nrawm heev, qhov rov qab rov qab them nqi ntawm lub cuab yeej raug txo, thiab qhov hloov pauv ceev yog li ntawd.Cov kev ntsuas zoo li no tau siv los ua kom zoo dua cov yam ntxwv hloov pauv sai, cov yam ntxwv ntawm lub xeev, thiab nce cov khoom tam sim no.Kev ua haujlwm thiab kev ua haujlwm ntawm thyristor yog txhim khu kev qha thiab ua haujlwm tau zoo.
2. Encapsulation
Los ntawm kev tswj nruj ntawm kev tiaj tus thiab kev sib luag ntawm molybdenum wafer thiab pob khoom sab nraud, cov nti thiab molybdenum wafer yuav raug sib xyaw nrog cov pob sab nraud kom nruj thiab ua tiav.Xws li yuav optimize qhov tsis kam ntawm surge tam sim no thiab siab luv luv tam sim no.Thiab kev ntsuas ntawm electron evaporation technology tau ua hauj lwm los tsim ib tug tuab aluminium zaj duab xis ntawm silicon wafer nto, thiab ruthenium txheej plated ntawm molybdenum nto yuav txhim khu thermal qaug zog tiv thaiv zoo heev, lub neej ua hauj lwm lub sij hawm ntawm ceev hloov thyristor yuav nce ho.
Technical specification
Parameter:
HOM | IT (AV) A | TC ℃ | VDRM/VRRM V | ITSM @TVJIM& 10ms A | I2t A2s | VTM @IT&TJ= 25 ℃ V/A | tq μs | Tjm ℃ | Rjc ℃ / W | Rcs ℃ / W | F KN | m Kg | CODE | |
Voltage mus txog 1600V | ||||||||||||||
YC476 | 380 | 55 | 1200-1600 Nws | ib 5320 | 1.4 x 105 | 2.90 ib | 1500 | 30 | 125 | 0.054 ib | 0.010 ib | 10 | 0.08 ib | T2A |
YC448 | 700 | 55 | 1200-1600 Nws | 8400 ib | 3.5 x 105 | 2.90 ib | 2000 | 35 | 125 | 0.039 ib | 0.008 ib | 15 | 0.26 | T5C |
Voltage mus txog 2000V | ||||||||||||||
YC712 | 1000 | 55 | 1600-2000 Nws | 14 000 | 9 x105 | 2.20 | 3000 | 55 | 125 | 0.022 ib | 0.005 ib | 25 | 0.46 ib | T8C |
YC770 | 2619 ib | 55 | 1600-2000 Nws | 3 1400 | 4,9x10 6 | 1.55 ib | 2000 | 70 | 125 | 0.011 ib | 0.003 ib | 35 | 1.5 | T13D |